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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAS29; BAS31; BAS35 General purpose controlled avalanche (double) diodes
Product specification Supersedes data of 1999 May 21 2001 Oct 10
Philips Semiconductors
Product specification
General purpose controlled avalanche (double) diodes
FEATURES * Small plastic SMD package * Switching speed: max. 50 ns * General application * Continuous reverse voltage: max. 90 V * Repetitive peak reverse voltage: max. 110 V * Repetitive peak forward current: max. 600 mA * Repetitive peak reverse current: max. 600 mA. APPLICATIONS * General purpose switching in e.g. surface mounted circuits. DESCRIPTION General purpose switching diodes fabricated in planar technology, and encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The BAS31 has two diodes in series. The BAS35 has two diodes with a common anode. MARKING TYPE NUMBER BAS29 BAS31 BAS35 Note 1. = p : Made in Hong Kong. = t : Made in Malaysia. = W : Made in China. MARKING CODE(1) L20 L21 or V1 L22 or V2
3
a. Simplified outline.
handbook, halfpage 2
BAS29; BAS31; BAS35
PINNING DESCRIPTION PIN BAS29 1 2 3 anode not connected cathode anode cathode common connection BAS31 BAS35 cathode (k1) cathode (k2) common anode
1
2 3
1
c. BAS31 diode.
2 n.c. 3
b. BAS29 diode.
1
2 3
d. BAS35 diode.
1
MAM233
Fig.1 Simplified outline (SOT23) and symbols.
2001 Oct 10
2
Philips Semiconductors
Product specification
General purpose controlled avalanche (double) diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VRRM VR IF repetitive peak reverse voltage continuous reverse voltage continuous forward current PARAMETER CONDITIONS
BAS29; BAS31; BAS35
MIN. - -
MAX.
UNIT
110 90 250 150 600
V V mA mA mA
single diode loaded; see Fig.2; note 1 double diode loaded; see Fig.2; note 1
- - -
IFRM IFSM
repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 100 s t=1s
- - - - - - -65 -
10 4 0.75 250 600 5 +150 150
A A A mW mA mJ C C
Ptot IRRM ERRM Tstg Tj Note
total power dissipation repetitive peak reverse current repetitive peak reverse energy storage temperature junction temperature
Tamb = 25 C; note 1 tp 50 s; f 20 Hz; Tj = 25 C
1. Device mounted on an FR4 printed-circuit board.
2001 Oct 10
3
Philips Semiconductors
Product specification
General purpose controlled avalanche (double) diodes
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA IF = 400 mA IR reverse current see Fig.5 VR = 90 V VR = 90 V; Tj = 150 C V(BR)R Cd trr reverse avalanche breakdown voltage diode capacitance reverse recovery time IR = 1 mA f = 1 MHz; VR = 0; see Fig.6 PARAMETER CONDITIONS
BAS29; BAS31; BAS35
MIN.
MAX.
UNIT
- - - - - - - 120 -
750 840 900 1 1.25 100 100 170 35 50
mV mV mV V V nA A V pF ns
when switched from IF = 30 mA to - IR = 30 mA; RL = 100 ; measured at IR = 3 mA; see Fig.7
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 360 500 UNIT K/W K/W
2001 Oct 10
4
Philips Semiconductors
Product specification
General purpose controlled avalanche (double) diodes
GRAPHICAL DATA
BAS29; BAS31; BAS35
handbook, halfpage
300
MBG440
handbook, halfpage
600
MBH280
IF (mA) 200
(1)
IF (mA) 400
(1) (2) (3)
100
200
(2)
0 0 100 Tamb (oC) 200
0 0 (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. 1 VF (V) 2
Device mounted on an FR4 printed-circuit board. (1) Single diode loaded. (2) Double diode loaded.
Fig.2
Maximum permissible continuous forward current as a function of ambient temperature.
Fig.3
Forward current as a function of forward voltage.
102 handbook, full pagewidth IFSM (A)
MBH327
10
1
10-1 1 Based on square wave currents. Tj = 25 C prior to surge. 10
102
103
tp (s)
104
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2001 Oct 10
5
Philips Semiconductors
Product specification
General purpose controlled avalanche (double) diodes
BAS29; BAS31; BAS35
102 handbook, halfpage IR (A) 10
MBH282
MGD003
handbook, halfpage
40
Cd (pF) 30
1
(1)
(2)
20
10-1
10
10-2 0 100 Tj (oC) 200
0 0 10 20 VR (V) 30
(1) VR = 90 V; maximum values. (2) VR = 90 V; typical values.
f = 1 MHz; Tj = 25 C.
Fig.5
Reverse current as a function of junction temperature.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
handbook, full pagewidth
tr D.U.T. 10% SAMPLING OSCILLOSCOPE R = 50 i VR 90%
tp t
RS = 50 V = VR I F x R S
IF
IF
t rr t
(1)
MGA881
input signal
output signal
(1) IR = 3 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
2001 Oct 10
6
Philips Semiconductors
Product specification
General purpose controlled avalanche (double) diodes
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BAS29; BAS31; BAS35
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC TO-236AB EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2001 Oct 10
7
Philips Semiconductors
Product specification
General purpose controlled avalanche (double) diodes
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development
BAS29; BAS31; BAS35
DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Oct 10
8
Philips Semiconductors
Product specification
General purpose controlled avalanche (double) diodes
NOTES
BAS29; BAS31; BAS35
2001 Oct 10
9
Philips Semiconductors
Product specification
General purpose controlled avalanche (double) diodes
NOTES
BAS29; BAS31; BAS35
2001 Oct 10
10
Philips Semiconductors
Product specification
General purpose controlled avalanche (double) diodes
NOTES
BAS29; BAS31; BAS35
2001 Oct 10
11
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/04/pp12
Date of release: 2001
Oct 10
Document order number:
9397 750 08758

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